| 摘要 |
PROBLEM TO BE SOLVED: To reduce the usage of Mo, a rare metal, to reduce the entire cost and obtain an electrode of laminated structure with a high breakdown voltage and reliability maintained which can be used in a wide variety of applications as a substitute for Mo electrode by forming both the ends in the direction of lamination from a Mo layer in a laminate formed by alternately laminating Mo layers and a Cu layer. SOLUTION: The electrode is a laminate, formed by alternately laminating Mo layers 12 and a Cu layer 14. Both the ends of the laminate in the direction of lamination are formed on the Mo layers 12 having the same thickness, and the layers 12, 14 constituting the laminate are jointed with one another using brazing material 21. For example, an electrode 7 of laminated structure for use in semiconductor devices is formed by jointing Mo parts 12, 12 with upper and lower base 15, formed on a Cu part 14 on the upper and lower sides, using brazing material 21. Further, for example, the parallelism of the mating faces of the Mo layers 12 and the Cu layer 14 is controlled to within 5μm/10mm or below, and either or both of the Mo layers 12 and the Cu layer 14 are plated with Ni. In addition a brazing material 21 containing Ag and Cu is used.
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