发明名称 |
Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories |
摘要 |
A method for fabricating an ultra-small pore or contact for use in chalcogenide memory cells specifically and in semiconductor devices generally in which disposable spacers are utilized to fabricate ultra-small pores or contacts. The pores thus defined have minimum lateral dimensions ranging from approximately 500 to 4000 Angstroms. The pores thus defined may then be used to fabricate a chalcogenide memory cell or other semiconductor devices.
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申请公布号 |
US5814527(A) |
申请公布日期 |
1998.09.29 |
申请号 |
US19960686174 |
申请日期 |
1996.07.22 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
WOLSTENHOLME, GRAHAM R.;HARSHFIELD, STEVEN T.;TURI, RAYMOND A.;GONZALEZ, FERNANDO;BLALOCK, GUY T.;PARK, DONWON |
分类号 |
H01L27/24;H01L45/00;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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