发明名称 Commonly housed diverse semiconductor die
摘要 A MOSFET die and a Schottky diode die are mounted on a common lead frame pad and their drain and cathode, respectively, are connected together at the pad. The pad has a plurality of pins extending from one side thereof. The lead frame has insulated pins on its opposite side which are connected to the FET source, the FET gate and the Schottky diode anode respectively by wire bonds. The lead frame and die are molded in an insulated housing and the lead frame pins are bent downwardly to define a surface-mount package.
申请公布号 US5814884(A) 申请公布日期 1998.09.29
申请号 US19970816829 申请日期 1997.03.18
申请人 INTERNATIONAL RECTIFIER CORPORATION 发明人 DAVIS, CHRISTOPHER;CHEAH, CHUAN;KINZER, DANIEL M.
分类号 H01L25/18;H01L23/495;H01L23/50;H01L25/04;(IPC1-7):H01L23/24;H01L23/48;H01L23/52 主分类号 H01L25/18
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