摘要 |
A plurality of transistors according to the present invention formed on a semiconductor wafer including a plurality of non-ESD transistors, the plurality of non-ESD transistors including spacer regions and impurity implant regions encroaching the spacer regions, and a plurality of ESD transistors, the plurality of ESD transistors formed at a predetermined angular offset from the non-ESD transistors. Further, the plurality of ESD transistors include the spacer regions and impurity implant regions encroaching the spacer regions further than the impurity implant regions of the non-ESD transistors.
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