发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To make the lead-out of the electrodes easy and to improve the integration degree by making the specific resistance of the semiconductor substrate sufficiently large so that even when the windoew for connection protsudes to the outside of the internal element and causes a shorting with a semiconductor substrate area of the surrounding area, the shorting resistance is sufficiently high and does not adversely affect the operation of the internal element.
申请公布号 JPS51135386(A) 申请公布日期 1976.11.24
申请号 JP19750059406 申请日期 1975.05.19
申请人 NIPPON ELECTRIC CO 发明人 MUKOUGAWA MASASHI
分类号 H01L23/522;H01L21/768;H01L27/07;H01L29/41 主分类号 H01L23/522
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