| 摘要 |
PROBLEM TO BE SOLVED: To improve an etching resistance and at the same time reduce the formation of a pattern by setting a temperature in a plurality of stages by a postbake treatment and performing the postbake treatment at different temperatures. SOLUTION: The flexibility in a resist advances in a bake treatment at 120 deg.C for 120 seconds, a pattern is deformed, a resist pattern 32 on a substrate 31 becomes a deformed resist pattern 33 after postbaking where the flexibility temperature of a resist material is at a glass transformation temperature of approximately 110 deg.C. Also, when ultraviolet rays are applied, the temperature of the resist surface increases momentarily, a small resist flexibility occurs at a surface part, and a pattern is deformed. On the contrary, when bake treatment is performed continuously at 120 deg.C for 60 seconds after the bake treatment for 60 seconds at a glass transformation temperature of 100 deg.C or less, a crosslinking reaction in the resist advances, no flexibility of the resist advances even if a temperature is increased to a glass transformation temperature or higher, and a resist pattern 34 with less deformation can be obtained. |
