发明名称 PIEZOELECTRIC THIN FILM RESONATOR
摘要 PROBLEM TO BE SOLVED: To provide a piezoelectric thin film resonator with a wide band width and a wide oscillating frequency range when it is applied to a resonator, a filter or the like and having a large electromechanical coupling coefficient. SOLUTION: This resonator is provided with a single crystal substrate 3, a piezoelectric thin film 2 formed on the single crystal substrate 3 and two electrodes 1 made of a conductive film formed on the piezoelectric thin film 2. In this case, the piezoelectric thin film 2 is made of e.g. lead zirconate titanate (PZT) or lead titanate (PT) thin film whose the thickness is 0.1-10μm formed by a sol-gel method, an electric field is applied between the two electrodes 1 to apply polarization processing and to make the piezoelectric thin film. As required, an interval between the two electrodes 1 is made to 0.5-10μm and a part of a rear side of the single crystal substrate is removed by etching.
申请公布号 JPH10261934(A) 申请公布日期 1998.09.29
申请号 JP19970064198 申请日期 1997.03.18
申请人 MITSUBISHI MATERIALS CORP 发明人 HANASHIMA NAOYUKI;TSUZUMI SHUJI;YONEZAWA MASA;HASHIMOTO KIYONARI
分类号 H03H9/17;(IPC1-7):H03H9/17 主分类号 H03H9/17
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