| 摘要 |
PROBLEM TO BE SOLVED: To improve scale factor accuracy of a current detecting element by providing a high resistance region which includes a crystal defect extending in a semiconductor substrate direction from an epitaxial layer surface and electrically isolating a semiconductor element from other semiconductor elements by the high resistance region. SOLUTION: A plurality of main elements 5 of a vertical field effect transistor (VDMOS) and a current detecting element 7 for the VDMOS are provided. A path 9 for carriers is provided directly under a substrate 1 whereupon the current detecting element 7 is formed, and the carrier path 9 is aligned by a high resistance region 10. The main elements 5 control the movement of many electrons, e.g. carriers, from the substrate 1 which is to be the drain region of the VDMOS. Thus, a large current can be obtained, and the current detecting element 7 detects a small current in proportion to the large current. A high resistance region 10 performs matching of current from the substrate 1 and electrically separates a current that flows in the main elements 5 from a current that flows in the current detecting element 7, and a high current detection accuracy can be expected. |
