| 摘要 |
A semiconductor memory device having memory cells and digit lines connected to the memory cells, a precharger precharging the digit lines of the memory cells to a dropped voltage, a memory cell selector selecting one of the memory cell, a sense amplifier comparing a level of the digit line of the selected memory cell with a reference level to read out data. The dropped voltage is applied to the memory cells to disuse a current detection part of a conventional sense amplifier, resulting in miniaturization of the memory device.
|
