Multiple writes per a single erase for a nonvolatile memory

摘要

A method for performing multiple writes before an erase to a nonvolatile memory cell is described. A first bit is stored at a first level of a nonvolatile memory cell. A second bit is stored at a second level of the nonvolatile memory cell. A method of erasing a nonvolatile memory cell is described. A level indicator that indicates the next level of the nonvolatile memory cell to write to is incremented. A method of reading a nonvolatile memory cell includes recalling a level indicator. The nonvolatile memory cell is then sensed at a level indicated by the level indicator to determine the state of the memory cell.