VCSEL including GaTlP active region

摘要

A VCSEL for emitting long wavelength light including a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaTlP active region with an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure having a quantum well, and a second mirror stack lattice matched to the second cladding region and having mirror pairs in a GaAs/AlGaAs material system.