| 摘要 |
FIELD: microelectronics and semiconductor engineering. SUBSTANCE: transistor has emitter, base, and collector regions with ohmic contacts for them. Gate electrode provided above emitter layer (Y <0) formed in working area <EMI ID=0.77 HE=6 WI=90 TI=CHI> is made of material whose polarity of conductivity is reverse to that of emitter and has ohmic contact or it may be made of metal forming Schottky barrier together with emitter. Emitter region is formed as film of either nonuniform thickness D(X) along surface coordinate X or with nonuniform doping profile Ni (X, Y), or with nonuniform thickness D(X) and with nonuniform doping profile Ni (X, Y); thickness of emitter layer D (X) and doping profile are chosen proceeding from complete leaning of part of emitter region with major charge carriers up to breakdown of p- n junction or Schottky barrier formed between gate electrode and emitter. EFFECT: provision for producing bipolar transistor with any preset type of transfer characteristic including linear one. 4 cl, 5 dwg
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