PHOTOMASK AND PRODUCTION OF ELECTRONIC COMPONENT

摘要

PROBLEM TO BE SOLVED: To provide a photomask for forming asymmetrical resist patterns and a method for using such photomask. SOLUTION: The wafer coated with a resist is exposed under a specifically controlled out-of-focus condition by using the mask 22 for providing the asymmetrical resist pattern profiles. The mask 22 includes phase transition means 24 disposed on one or both sides of a light shielding pattern forming material 25. The light rays varying in phases are passed through the respective sides of the light shielding material, by which the asymmetrical resist pattern profiles (17 to 20) are formed.