DOPED DISTORTION MULTIPLE QUANTUM WELL STRUCTURE

摘要

PROBLEM TO BE SOLVED: To increase the critical film thickness, by using a well layer doped with dopants having properties coupling with elements constituting the well layer and forming microcrystal. SOLUTION: A distortion multiple quantum well layer 2 composed of well layers 3 and barrier layers 4 is constituted on a substrate 1 composed of semiconductor single crystal. The well layers and the barrier layers are alternately laminated, and constitute structure wherein carriers are confined in the well layers 3. III-V compound semiconductor mixed crystal such InGaAs and II-VI compound semiconductor mixed crystal can be used as the well layer 3, which is constituted by doping with dopants having properties coupling with host element and forming microcrystal. Lanthanoid elements like Er or actionid elements can be used as the dopant of the well layer 3. Er couples with group V elements or group VI elements and forms microcrystal having NaCl type crystal structure in host crystal.