| 摘要 |
PROBLEM TO BE SOLVED: To avoid the contact failure if the photoengraving superposition deviates by using a nitride film as a second side walls at storage node contacts, which is deposited as a etching barrier for bit line contacts formed by the self alignment method. SOLUTION: Oxide films 7, 8 cover transfer fates 6 at bit line contacts, contacts are formed on the oxide films 7, 8 with leaving thick laminated nitride films, and contacts are formed with leaving thin side wall-like nitride film 10b on the oxide film 8 covering the gates 6 at storage node contacts, thereby forming a structure of the bit line contacts using the self alignment method. The nitride film deposited as an etching barrier of the bit line contacts is structured to form second side walls at the storage node contacts. |
