| 摘要 |
PROBLEM TO BE SOLVED: To effectively bring all fin into contact with a source diffused region by forming an insulating film having high denseness of contact holes in a dynamic random access memory(DRAM) having a fin type storage capacitor including a plurality of fins and its method for manufacturing it. SOLUTION: The method for manufacturing a semiconductor device comprises the steps of alternately laminating insulating films 28, 30 and conductive films 29, 31 on first insulating films 24 to 27 formed on a substrate 21, forming a conductive film 31 on an uppermost layer, anisotropically etching from the film 31 of the uppermost layer to the film 29 of a lowermost layer to remove it to form an opening for exposing the films 29, 31 at a sidewall, retaining a first conductive film 33a at the sidewall of the opening, further etching via the opening to expose the substrate 21, anisotropically etching the second insulating film, and retaining the film 35a at the sidewall of the opening 34. |
