发明名称 MANUFACTURE OF PRESSURE MICROSENSOR
摘要 PROBLEM TO BE SOLVED: To store the atmospheric pressure air in spaces by forming an Si dioxide layer on an Si layer which forms partitions by the vapor phase deposition to close holes after forming the partitions; the holes having a less width than the thickness of the partition. SOLUTION: On an Si substrate polycrystal Si partitions 12' having circular holes 14' and thickness of about 10μare mounted along the edge of the substrate. The holes 14' for etching an oxide below the partitions 12' have each a diameter of about 2μm. An Si dioxide layer 16 on the polycrystal Si of the partitions is made by the vapor deposition in the air, using a mixture of silane with O at a ratio of 1:10. A reagent is stored in the holes 14'. Until perfectly closing the holes, the hole width is reduced to close the spaces, thereby storing the atmospheric pressure air in the spaces 15.
申请公布号 JPH10256564(A) 申请公布日期 1998.09.25
申请号 JP19980051886 申请日期 1998.03.04
申请人 SGS THOMSON MICROELECTRON SRL 发明人 VIGNA BENEDETTO;FERRARI PAOLO;MONTANINI PIETRO;FERRERA MARCO
分类号 G01L9/08;G01L9/00;H01L29/84;(IPC1-7):H01L29/84 主分类号 G01L9/08
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