| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory capable of increasing storage charge amount by incorporating a planar stack capacitor structure, and increasing an area of a ferroelectric thin film. SOLUTION: The semiconductor memory comprises a first semiconductor memory cell, and a second semiconductor memory cell adjacent to the first cell. The first and second cells each includes a MOS transistor element, and a flat plate-like capacitor having lower electrodes 22A, 22B provided on interlayer insulating layers 20, 25 and connected to one 15A, 15B of source, drain regions of the element, capacitor insulating films 23A, 23B formed of ferroelectric thin films, and upper electrodes 24A, 24B. Part of a periphery of the first capacitor and part of a periphery of the second capacitor are superposed to one another via an interlayer insulating layer 25 vertically. |
