发明名称 LINE MEMORY
摘要 PROBLEM TO BE SOLVED: To express the function of a line memory with a kind of bit line. SOLUTION: Since word lines WLj-1 , WLj are activated in this order, read- out is performed already before new write-in is performed to memory cells MCj-1 ,i , MCj ,i . That is, since a write-in process is executed to the same memory cell after a read-out process, delay operation is realized similarly to a usual technique. Moreover, since operation of a try state buffer 11 and a D latch 13 are controlled according to the read-out process and write-in process, a write-in bit line is shared with a read-out bit line.
申请公布号 JPH10255459(A) 申请公布日期 1998.09.25
申请号 JP19970055016 申请日期 1997.03.10
申请人 MITSUBISHI ELECTRIC CORP 发明人 HOSOYA SHIRO;YAZAWA HISANOBU
分类号 G11C11/41;G11C8/04;G11C11/401;G11C11/405;H01L21/8242;H01L27/108 主分类号 G11C11/41
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