发明名称 THIN FILM DEVICE AND MANUFACTURE OF THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a thin film device and a manufacturing method of a thin film capable of forming a thin film having excellent characteristics by locally controlling the substrate temperature when forming the thin film and having no adverse effect on a peripheral region of the thin film. SOLUTION: A micro heater 5 is locally set correspondingly to the thin film formed region R when forming a lower electrode 7 and a piezoelectric thin film 8, and by supplying the micro heater with power, only the temperature of the substrate region corresponding to the thin film formed region R is raised to the extent suitable for the temperature required for the thin film formation. While the thin film 8 having an excellent characteristic is formed in the region of the thin film formed region R thus heated as above, the temperature elevation in the substrate region other than the thin film formed region R is suppressed, the problem caused by the diffusion of the thin film material into the processing circuit formed region and a significantly degraded performance of the processing circuit caused by the rediffusion of the impurity already introduced into the semiconductor substrate 2 can be resolved.
申请公布号 JPH10256570(A) 申请公布日期 1998.09.25
申请号 JP19970061351 申请日期 1997.03.14
申请人 MATSUSHITA ELECTRIC IND CO LTD;MAENAKA KAZUSUKE;OSAKA PREFECTURE 发明人 MANABE YOSHIO;MAENAKA KAZUSUKE;SUZUKI YOSHIHIKO
分类号 C23C16/04;G01S7/521;H01L29/84;H01L41/08;H01L41/22;H04R17/00 主分类号 C23C16/04
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