发明名称 |
THIN FILM DEVICE AND MANUFACTURE OF THIN FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a thin film device and a manufacturing method of a thin film capable of forming a thin film having excellent characteristics by locally controlling the substrate temperature when forming the thin film and having no adverse effect on a peripheral region of the thin film. SOLUTION: A micro heater 5 is locally set correspondingly to the thin film formed region R when forming a lower electrode 7 and a piezoelectric thin film 8, and by supplying the micro heater with power, only the temperature of the substrate region corresponding to the thin film formed region R is raised to the extent suitable for the temperature required for the thin film formation. While the thin film 8 having an excellent characteristic is formed in the region of the thin film formed region R thus heated as above, the temperature elevation in the substrate region other than the thin film formed region R is suppressed, the problem caused by the diffusion of the thin film material into the processing circuit formed region and a significantly degraded performance of the processing circuit caused by the rediffusion of the impurity already introduced into the semiconductor substrate 2 can be resolved. |
申请公布号 |
JPH10256570(A) |
申请公布日期 |
1998.09.25 |
申请号 |
JP19970061351 |
申请日期 |
1997.03.14 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD;MAENAKA KAZUSUKE;OSAKA PREFECTURE |
发明人 |
MANABE YOSHIO;MAENAKA KAZUSUKE;SUZUKI YOSHIHIKO |
分类号 |
C23C16/04;G01S7/521;H01L29/84;H01L41/08;H01L41/22;H04R17/00 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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