| 摘要 |
PROBLEM TO BE SOLVED: To obtain a multiple quantum well structure containing an InGaAsP layer or an InGaAlAs layer as a well layer, and increase output, by using an InGaAlAs layer as a barrier. SOLUTION: On a first conductivity type InP substrate 2, a first SCH (isolation confinement type heterojunction) layer 23, a multiple quantum well structure 25, a second SCH layer 27 and an InP clad layer 29 are formed from the substrate side. As to the multiple quantum well structure 25, a barrier layer 25a is constituted of InGaAlAs, a well layer 25b is constituted of an InGaAs layer, and five periods of such a quantum well are formed. The InGaAs well layer is a layer expressed by mixed crystal of Inx Ga1-x As. Thereby the output power of an semiconductor light emitting element provided with the multiple quantum well structure containing the InGaAs layer or the InGaAsP layer or the InGaAlAs layer as the well layer can be increased. |
