| 摘要 |
PROBLEM TO BE SOLVED: To improve the luminous efficiency and luminous characteristic by implanting impurities into a quantum well LED active region intentionally, and moreover adding intentionally similar impurities to be found in adjoining layers. SOLUTION: A thin GaN nucleus creating layer 14 is caused to grow on a sapphire substrate 12. A thick GaN layer 16 into which Si has been doped is caused to grow on the thin GaN nucleus creating layer 14. A first confinement layer 18 to be composed of GaN and Mg is caused to grow on the n-type GaN layer 16. A thin Inx Ga1-x NQW active region 20 is caused to grow on the first confinement layer 18. The thin QW active region is doped by arbitrary selection. A second confinement layer 22 composed of a GaN-based compound is arranged on the thin QW active region 20. The first and second confinement layers are doped independently or in combination. |
