SEMICONDUCTOR STRUCTURE AND DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a new structure, especially a CMOS structure, decreasing off-state current of a device. SOLUTION: A MOS transistor 70 contains two trench isolation regions 78 adjoining an active region 79. The trench isolation regions 78 is disposed on the opposite sides of the active region 79 so that side walls 80 of each trench acts as an interface for the active region 79, and at least one of the side walls 80 has inclination of 90-150 deg.. The trench isolation regions 78, a source injection region and a drain injection region 78 surround all sides of the active region 79.