| 摘要 |
PROBLEM TO BE SOLVED: To realize simplification of a processing method by obliquely forming a contact for a node electrode in a COB(capacitor overbit line) process, and realizing microminiaturization of an active region. SOLUTION: The method for manufacturing a semiconductor device comprises the steps of anisotropically etching a contact 70 for a node electrode in the state that a semiconductor substrate 0 is inclined on a surface of the substrate 0 to open obliquely, and forming the node electrode connected to the active region via the contact 70 above a bit line. In this case, the contact 70 is formed obliquely to simplify a shape pattern of the active region, and an area of the active region can be contracted. |
