发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a large-capacity capacitor the storage electrode of which is not peeled off even when such a manufacturing defect that an opening does not reach a base substrate occurs. SOLUTION: Laminated films having insulating layers as their uppermost and lowermost layers are formed by successively laminating pluralities of insulating films 18, 22, and 26 containing insulating layers having different etching rates upon a babe substrate 10 with conductive films 20 and 24 respectively in between. Then a conductive film 32 is formed on the laminated films and in an opening and fin type storage electrodes composed of the conductive film 32 and connected to the substrate 10 in the opening are formed by patterning the laminated films and conductive film 32. After the electrodes 34 are formed, a plurality of insulating films between the storage electrodes 34 are removed at nearly the same etching rates.
申请公布号 JPH10256499(A) 申请公布日期 1998.09.25
申请号 JP19970053264 申请日期 1997.03.07
申请人 FUJITSU LTD 发明人 KOIZUMI HAJIME
分类号 H01L27/04;H01L21/822;H01L21/8242;H01L27/108 主分类号 H01L27/04
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