| 摘要 |
PROBLEM TO BE SOLVED: To make an Si3 N4 film thinner or unnecessary at the time of forming bottomed cylindrical storage node electrodes. SOLUTION: After a plurality of contact sections 7 are formed in an interlayer insulating film 3 on a diffusion layer 2, bottomed cylindrical electrodes 23 are formed immediately above the contact sections 7 continuously from the contact sections 7 on the insulating film 3. At the time of forming the electrodes 23, an electrode material film 20 which covers the contact sections 7 is formed continuously from the contact sections 7 on the insulating film 3 in which the contact sections 7 are formed. Then a projecting pattern 21 is formed nearly immediately above the contact sections 7 in the upper part of the electrode material film 20 by etching the upper part of the film 20. After the projecting pattern 21 is formed, side walls 22 are formed on the side wall sections of the pattern 21. Thereafter, the bottomed cylindrical electrodes 23 are formed by etching the film 20 by using the side walls 22 as masks. |
