| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method and an apparatus, in which a cleaning operation is performed with good efficiency and in which the amount of a chemical liquid can be reduced by a method, wherein pure water and the chemical liquid are not mixed and an individual liquid is jetted or sprayed independently on an object to be leaned. SOLUTION: A six-inch Si wafer is spin-coated with an aqueous solution, in which Si particles in an average particle size of 0.8μm are dispersed, an intentionally contaminated wafer is manufactured, ammonia water 3, hydrogen peroxide water 2 and ultrapure water 1 which is warmed to 85 deg.C are jetted simultaneously on the contaminated wafer for 10 seconds, the supply of the ammonia water 3 and of the hydrogen peroxide water 2 is stopped, that is, only the ultrapure water 1 is jetted for five seconds. This cleaning operation is repeated five times, the wafer is then dried, and the number of foreign bodies 0.2μm or larger which remain on the wafer is measured by a foreign material inspection apparatus. It is found that a result of the cleaning operation by this cleaning method is enhanced by 90%. As a result the removal of a contamination and the etching operation of an oxide film can be performed with good efficiency, the cleaning time can be shortened, and the consumption amount of a chemical liquid and of ultrapure water for a cleaning operation can be reduced.
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