发明名称 WAFER SUPPORT HAVING IMPROVED TEMPERATURE CONTROL
摘要 <p>PROBLEM TO BE SOLVED: To maximize the heat transfer rate and improve the control and uniformity of the temp. across a wafer, without greatly increasing the manufacturing cost by placing a heat conductive gas feed port and gas drain on a support plane and mounting a pressure valve including a ceramic film on the drain. SOLUTION: A chuck has a workpiece support plane 104 having a periphery and radius, at least a heat conductive gas feed port 120 and gas drain 124 are disposed on the support plane 103, and a pressure valve 126 is mounted on the drain 124 through a channel 125 below the support plane 104 and includes a ceramic film for controlling and limiting the heat conductive gas flow in a gap between a workpiece 111 and support plane 104 of the chuck 100. The drain 124 is e.g. located at the center of the support plane 104 and the port 120 locates near the periphery of this plane 104.</p>
申请公布号 JPH10256357(A) 申请公布日期 1998.09.25
申请号 JP19970340478 申请日期 1997.11.05
申请人 APPLIED MATERIALS INC 发明人 KHOLODENKO ARNOLD
分类号 B23Q3/15;H01L21/683;(IPC1-7):H01L21/68 主分类号 B23Q3/15
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