| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable the use of an electrode wiring consisting of a low-resistance alloy and to improve the aperture ratio by making the width of the electrode wiring minute without deteriorating the operation and function, by covering the contact surfaces of respective electrode bodies and other layers with films consisting of a specified material. SOLUTION: The gate electrodes 9 are formed of the electrode bodies 9a which consist of Al or Al alloy or Cu or Cu alloy and the films 9b which consist of at least one kind of the materials selected from TiN, MoTa, MoW and cover at least the contact surfaces existing between the electrode bodies 9a and channel parts 18 among the surfaces at which the electrode bodies 9a come into contact with first gate insulating layers 10. The source electrodes 15 (drain electrodes 16) are formed of the electrode bodies 15a (16a) which consist of Al or an Al alloy or Cu or a Cu alloy and the films 15b (16b) which consist of at least one kind of the materials selected from among TiN, MoTa, MoW and cover the contact surfaces (contact surfaces and pixel electrodes 7) with at least the high concn. silicon active layers 14 of the electrode bodies 15a (16a).</p> |
