发明名称 MANUFACTURING METHOD OF NOTCHLESS WAFER
摘要 PROBLEM TO BE SOLVED: To easily determine where a crystal orientation is to be marked to produce a notchless wafer at a high work efficiency, by engraving the orientation mark at specified position from a notched reference by the laser marking and chamfering to remove the notch to form a genuine circular wafer. SOLUTION: A notch 1 extending along the axis of an ingot is cut into the side face of the ingot at specified crystal orientation position, the ingot is sliced into wafers of specified thickness by an inner blade or wire saw, and a crystal orientation mark 2 is formed at a final depth of approximately 10μm or more into the surface of the sliced wafer using a hard laser marker. Thus, the engraved position of the mark 2 is determined from the notch 1 as a reference, and hence notchless wafers can be produced without setting the wafers one by one in an X-ray analyzer.
申请公布号 JPH10256106(A) 申请公布日期 1998.09.25
申请号 JP19970055995 申请日期 1997.03.11
申请人 SUPER SILICON KENKYUSHO:KK 发明人 OISHI HIROSHI;ASAKAWA KEIICHIRO
分类号 H01L21/02;C30B33/00;H01L21/304;H01L23/544;(IPC1-7):H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项
地址