CHEMICAL AMPLIFICATION TYPE RESIST

摘要

PROBLEM TO BE SOLVED: To suppress the formation of a slightly soluble surface layer in a resist due to the deactivation of an acid and to prevent the formation of a T-shaped resist pattern after development by using polyhydroxystyrene resin obtd. by mixing polyhydroxystyrene resins hating the same protective groups or mutually different protective groups and different from each other in average mol.wt. SOLUTION: This chemical amplification type resist contains polyhydroxystyrene resin having protective groups whose polarity varies in the presence of an acid catalyst and a photo-acid generating agent. The resin is obtd. by mixing polyhydroxystyrene resins having the same protective groups or mutually different protective groups and different from each other in average mol.wt. The protected polyhydroxystyrene resins have relatively high average mol.wt. and relatively low average mol.wt. This resist has improved resolution because of a higher solution velocity of the unexposed part and a higher gradient of solubility known from the relation between the solution velocity of the resist to a developer and exposure.