FORMATION OF GATE ELECTRODE HAVING HIGH-MELTING-POINT METAL MATERIAL LAYER, AND MANUFACTURE OF SEMICONDUCTOR DEVICE HAVING SUCH GATE ELECTRODE,申请号JP19970055691-传众专利搜索

发明名称	FORMATION OF GATE ELECTRODE HAVING HIGH-MELTING-POINT METAL MATERIAL LAYER, AND MANUFACTURE OF SEMICONDUCTOR DEVICE HAVING SUCH GATE ELECTRODE
摘要
申请公布号	JPH10256260(A)	申请公布日期	1998.09.25
申请号	JP19970055691	申请日期	1997.03.11
申请人	SONY CORP	发明人	NAGAYAMA TETSUJI
分类号	H01L21/302;H01L21/027;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/321;H01L21/306	主分类号	H01L21/302
代理机构		代理人
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