Bridged doped zone manufacturing method e.g. for DMOS transistor

摘要

The method of providing bridged, doped zones involves applying and structuring a silicon nitride layer (34), with a given dopant material concentration, on a semiconductor zone (3). Thermal oxidation is then carried out so that at least one oxide region (6) and at least two dopant zones (36) separated by the oxide zone are formed on the surface of the semiconductor zone. A dopant material is introduced into the dopant zones on the semiconductor region surface and driven into the semiconductor region so that in the latter region a connected or continuous zone (7) is formed and has a dopant concentration exceeding that of the semiconductor region by more than ten times.