Durch Feldeffekt steuerbares Halbleiterbauelement

摘要

Disclosed is a new planar technology IGBT, wherein minority charge carrier density on the cathode side of the IGBT is increased by introducing a shielding zone (13) which is arranged around a base zone (5), thereby leading to reduced conducting-state voltage (VCESat). As a result of the drift field arising from the concentration gradient between the shielding zone (13) and the base zone (6), the inner zone (2) no longer acts as a drain for the minority charge carriers. In order to prevent a reduction in the IGBT breakdown voltage by introducing the shielding zone (13), an unconnected, floating, high-conductivity area is provided in the inner zone, wherein the lower edge (16) of said area is located further inside the inner zone(2) than the upper edge (14) of the shielding zone (13). The unconnected floating area provides a different type of conduction from the shielding zone and the inner zone (2).