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发明名称
METHOD FOR IMPLANTING ION INTO SILICON CARBIDE AND SILICON CARBIDE SEMICONDUCTOR DEVICE
摘要
申请公布号
JPH10256173(A)
申请公布日期
1998.09.25
申请号
JP19970055223
申请日期
1997.03.10
申请人
SANYO ELECTRIC CO LTD
发明人
TODA TADAO
分类号
H01L21/265;H01L21/338;H01L29/812;(IPC1-7):H01L21/265
主分类号
H01L21/265
代理机构
代理人
主权项
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