发明名称 Elektronisches, bistabiles Halbleiterschaltelement und Verfahren zu seiner Herstellung
摘要 1,147,355. Semi-conductor devices. DANFOSS A/S. 27 Oct., 1966 [10 Nov., 1965], No. 48188/66. Heading H1K. A junctionless non-rectifying solid state switching device comprises a body composed of substantially stoichiometric proportions of antimony and an element from Group VI of the Periodic Table and provided with opposed electrodes spaced from each other by less than 1 mm. of body material. The Group VI element is preferably sulphur or selenium and the antimony may be present in an excess not exceeding 1% by weight. In a preferred embodiment antimony and selenium are applied by cathodic evaporation to a large metal electrode 1 to form a layer 2 100 Á thick and electrodes 3 are provided on the opposite surface of the layer. The layer is initially amorphous, but crystalline conductive channels are formed between each electrode 3 and the electrode 1 by means of a current pulse or externally applied heat.
申请公布号 CH454297(A) 申请公布日期 1968.04.15
申请号 CH19660015415 申请日期 1966.10.21
申请人 DANFOSS A/S, FABRIK AUTOMATISCHER SCHALT- UND REGELAPPARATE 发明人 KNUD KRISTENSEN,IB
分类号 H01L45/00;(IPC1-7):H03K17/00 主分类号 H01L45/00
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