| 摘要 |
<p>1,111,438. Semiconductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. 3 Dec., 1965 [28 Dec., 1964], No.51341/65. Heading H1K. A method of forming an electrical connection between conductors on opposite major faces of a semi-conductor wafer, e.g. for an integrated circuit, comprises forming an aperture through the wafer and degenerately doping the wall of the aperture. Apertures (39) are formed in an N type semi-conductor wafer 1, Fig. 2A (not shown), the wafer is thermally oxidized, and the major faces are photo-masked leaving a small annular area exposed round each aperture (39), Fig. 2B (not shown). The wafer is etched in hydrofluoric aoid to remove the oxide layers covering the walls of the apertures (39) and then exposed to an acceptor vapour to form degenerately doped P type regions (51) in the walls of the apertures (39), Fig. 2C (not shown). As shown, Fig. 2D, thin film conductors 53, 53a, 55, 55a are deposited on both the major faces of the wafer and are interconnected by the regions 51. Degenerate strips may be provided in the major surfaces of the wafer simultaneously and integrally with regions 51 to form connections to degenerately doped regions of some components. The apertures may be made by subjecting a masked wafer to a glow discharge in an atmosphere of argon, Fig. 1 (not shown). The mask may be of aluminium in which case a small amount of oxygen is introduced into the atmosphere so that during the discharge the aluminium is oxidized. Alternatively the apertures may be produced by etching, e.g. with gaseous hydrogen chloride, Figs. 3A to 3C (not shown). Since the etching produces tapered apertures the wafer is masked on the face opposite to that in which active and passive devices are to be formed to allow the maximum surface area for these components. The apertures may also be etched from both faces at once using masks with aligned windows.</p> |
