Method of manufacturing semiconductor devices

摘要

1,113,217. Semi-conductor devices. MATSUSHITA ELECTRONICS CORPORATION. 20 Oct., 1965 [26 Oct., 1964], No. 44440/65. Heading H1K. Connections are made to electrodes on a semiconductor device using a transparent flat insulator plate having conductive patterns coated thereon. A silicon body 1 having base 2 and emitter 3 regions therein is joined to metal base 16 by gold alloy 17. Metal pins 19 and 20 are mounted in glass holders 18 and are joined to metallic leads 10 and 11 by solder 21. The leads 10 and 11 are formed on a glass slide 9 which has notches 14 and 15 to fit around pins 19 and 20. The base 5 and emitter 6 electrodes are led out through oxide film 4 and joined to the leads 10 and 11 at 7 and 8. The transparent substrate 9 enables the leads to be positioned over the electrodes using a microscope and then pressure bonded. In another embodiment (Fig. 4, not shown) a P-type germanium mesa has leads on transparent substrate joined to it. The mass production of planar transistor units on Mo plates which are finally coated with epoxy resin or glass is also disclosed (Figs. 5a, 5b and 5c, not shown). Connections may be made to an integrated circuit (Fig. 6, not shown) using a glass or quartz substrate having Ag, Au, Al, In, Pt or Cu leads coated thereon. The leads may be pressure welded to the semi-conductor electrodes by heating in an inert atmosphere.