| 摘要 |
PROBLEM TO BE SOLVED: To obtain a strong adhesion to a semiconductor film by making the electrode of a nitride compound semiconductor out of a metallic nitride. SOLUTION: A metallic nitride is chosen out of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. Besides, a nitride compound semiconductor is chosen out of Ga, In, Al, GaIn, GaIl, InAl, and GaInAl. An n electrode 7 is formed on the exposed- by-mesa-etching surface of a p-type GaN layer 3. And a p electrode 8 is formed on a p-type GaN layer 6. Since the metal nitride has a low specific resistance and is usable as an electrode, and both the nitride compound semiconductor and the electrode contain nitrogen in common, it bocomes possible to increase the adhesive force of the electrode to the nitride compound semiconductor. |
