发明名称 |
PSZT for integrated circuit applications |
摘要 |
An integrated circuit memory, MMIC, or other device including a dielectric comprising lead-tin zirconium-titanium oxide (PSZT). The proportion of tin ranges from 30% to 50% of the total amount of tin, zirconium and titanium. The dielectric is formed by applying a first liquid precursor having 10% excess lead to a substrate and heating it to form a first PSZT thin film, applying a second liquid precursor having 5% excess lead to the first thin film and heating to form a second thin film, then applying the first liquid precursor and heating to form a third thin film, and annealing the three thin films together to form a PSZT dielectric layer.
|
申请公布号 |
US5811847(A) |
申请公布日期 |
1998.09.22 |
申请号 |
US19960672421 |
申请日期 |
1996.06.28 |
申请人 |
SYMETRIX CORPORATION |
发明人 |
JOSHI, VIKRAM;CUCHIARO, JOSEPH D.;PAZ DE ARAUJO, CARLOS A.;MCMILLAN, LARRY D. |
分类号 |
H01L21/02;H01L27/115;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|