发明名称 Method of making reliable metal leads in high speed LSI semiconductors using dummy leads
摘要 A method for manufacturing semiconductor device having conductive metal leads 14 with improved reliability, and device for same, comprising conductive metal leads 14 on a substrate 12, a first insulating material 18 at least between the conductive metal leads 14, and dummy leads 16 proximate the conductive metal leads 14. Heat from the conductive metal leads 14 is transferable to the dummy leads 16, and the dummy leads 16 are capable of dissipating the heat. The first insulating material 18 has a dielectric constant of less than 3.5. An optional heatsink 22 may be formed in contact with the first dummy leads 16 to further dissipate the Joule's heat from the conductive metal leads 14. An advantage of the invention is to improve reliability of metal leads for circuits using low-dielectric constant materials.
申请公布号 US5811352(A) 申请公布日期 1998.09.22
申请号 US19960857803 申请日期 1996.11.06
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 NUMATA, KEN;HOUSTON, KAY
分类号 H01L23/52;H01L21/3205;H01L21/768;H01L23/522;(IPC1-7):H01L21/28 主分类号 H01L23/52
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