发明名称 Plasma assisted chemical transport method and apparatus
摘要 A plasma assisted chemical transport system for additive or subtractive shaping of a substrate surface employs a plasma head (30) that generates a plasma (34) and is caused to scan the surface of a workpiece (51) to provide selective shaping, either by etching or depositing material. Corrosive gases of the plasma are isolated to minimize corrosive effects on the drive mechanism (20) by encompassing the plasma head within a flexible bellows (64). Scanning is in a circular path of varying radius. Acceleration induced vibrations caused by programmed varying scan velocity are avoided by use of an oppositely rotation body (56) of equal torsional inertia. Effects of linear acceleration in the radial direction are effectively avoided by making rotational scan velocity many times greater than radial scan velocity. Errors due to singularity that could exist when the scanning plasma head is at the center of its scan are kept within acceptable tolerances by stopping the scan when the center of the scanning head (30) is at a distance DELTA r from the center of the scan path that is equal to incremental radial steps between successive circular scan paths.
申请公布号 US5811021(A) 申请公布日期 1998.09.22
申请号 US19950396407 申请日期 1995.02.28
申请人 HUGHES ELECTRONICS CORPORATION 发明人 ZAROWIN, CHARLES B.;BARON, ROBERT
分类号 B23K10/00;C23C8/36;C23C16/04;C23C16/50;(IPC1-7):C23C4/00;C23C16/54;H01L21/02;H05H1/00 主分类号 B23K10/00
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