发明名称 |
Planarization of shallow- trench- isolation without chemical mechanical polishing |
摘要 |
A new method for planarization of shallow trench isolation is disclosed by the wet etching and plasma etching, due to the surface sensitivity of SACVD O3-TEOS that depends on substrate. The method described herein includes a pad oxide layer, a silicon nitride layer, and a doped polysilicon oxide layer formed on a silicon substrate. A shallow trench is formed by photolithography and dry etching process to etch the doped polysilicon oxide layer, the silicon nitride layer, the pad oxide layer, and the silicon substrate. A SACVD O3-TEOS layer is subsequently formed on the on the doped polysilicon oxide layer and filling into the trench, the deposition rate of the ozone-TEOS layer on the doped polysilicon oxide layer is slower than the deposition rate of the ozone-TEOS layer on the silicon wafer, the wet etching rate of the ozone-TEOS layer on the doped polysilicon oxide layer is faster than the etching rate of the ozone-TEOS layer on the silicon wafer. A wet etching is performed to planarize the ozone-TEOS layer.
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申请公布号 |
US5811345(A) |
申请公布日期 |
1998.09.22 |
申请号 |
US19970932895 |
申请日期 |
1997.09.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YU, CHEN-HUA;JANG, SYUN-MING JANG |
分类号 |
H01L21/3105;H01L21/311;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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