| 发明名称 |
Low noise, high power pseudomorphic HEMT |
| 摘要 |
In a DH-PHEMT the channel layer comprises InGaAs, the donor layers comprise InyGa1-yP(0.15</=y</=0.85), and each of the spacer layers comprises an In0.5-q(AlxGa1-x)0.5+qP outer spacer layer (0.2</=x) and an AlrGa1-rAs (0</=r</=0.3) inner spacer layer. In another embodiment, a similar InAlGaP layer forms a Schottky barrier gate contact with a barrier height of at least 1.0 eV and hence low leakage current. The devices exhibit the capability for both low noise and high power operation at low supply voltages.
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| 申请公布号 |
US5811844(A) |
申请公布日期 |
1998.09.22 |
| 申请号 |
US19970887587 |
申请日期 |
1997.07.03 |
| 申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
KUO, JENN-MING;WANG, YU-CHI |
| 分类号 |
H01L29/778;(IPC1-7):H01L29/778 |
主分类号 |
H01L29/778 |
| 代理机构 |
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