| 发明名称 |
Ferroelectric thin film, ferroelectric thin film covering substrate and manufacturing method of ferroelectric thin film |
| 摘要 |
A close a-axis orientating film having a smooth surface and excellent ferroelectric characteristics is manufactured at a low temperature with preferable reproducibility to apply ferroelectric Bi4Ti3O12 to development of various kinds of devices such as a ferroelectric non-volatile memory, a pyroelectric sensor, etc. A ferroelectric Bi4Ti3O12 thin film is formed on a substrate through a titanium oxide buffer layer so that closeness and surface smoothness of the Bi4Ti3O12 thin film manufactured on the titanium oxide buffer layer can be improved.
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| 申请公布号 |
US5811181(A) |
申请公布日期 |
1998.09.22 |
| 申请号 |
US19950449701 |
申请日期 |
1995.05.24 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KIJIMA, TAKESHI;SATOH, SAKIKO;MATSUNAGA, HIRONORI;KOBA, MASAYOSHI;OHTANI, NOBORU |
| 分类号 |
C01G49/00;C01G29/00;C23C16/40;C23C16/56;H01B3/02;H01B3/10;H01B3/12;H01B17/60;H01B19/00;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/10;H01L27/105;H01L27/108;H01L29/788;H01L29/792;H01L41/24;H01L49/02;(IPC1-7):B32B17/00 |
主分类号 |
C01G49/00 |
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