发明名称 Pre-oxidizing high-dielectric-constant material electrodes
摘要 Generally, according to the present invention, the sidewall of the adhesion layer (e.g. TiN 36) in a lower electrode is pre-oxidized after deposition of an unreactive noble metal layer (e.g. Pt 38) but before deposition of an HDC material (e.g. BST 42). An important aspect of the present invention is that the pre-oxidation of the sidewall generally causes a substantial amount of the potential sidewall expansion (and consequent noble metal layer deformation) to occur before deposition of the HDC material. One embodiment of the present invention is a microelectronic structure comprising a supporting layer having a principal surface, and an adhesion layer overlying the principal surface of the supporting layer, wherein the adhesion layer comprises a top surface and an expanded, oxidized sidewall (e.g. TiO2 40). The structure further comprises a noble metal layer overlying the top surface of the adhesion layer, wherein the noble metal layer comprises a deformed area overlying the oxidized sidewall, and a high-dielectric-constant material layer overlying the noble metal layer. The high-dielectric-constant material layer is substantially free of expansion stress cracks in proximity to the deformed area of the noble metal layer.
申请公布号 US5811851(A) 申请公布日期 1998.09.22
申请号 US19960661501 申请日期 1996.06.11
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 NISHIOKA, YASUSHIRO;SUMMERFELT, SCOTT R.;PARK, KYUNG-HO;BHATTACHARYA, PIJUSH
分类号 H01L21/02;(IPC1-7):H01L31/062;H01L27/108;H01L29/12;H01L23/48 主分类号 H01L21/02
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