| 发明名称 |
Hot pressed silicon carbide wafer and method of using it as dummy wafer |
| 摘要 |
This invention relates to hot pressed silicon carbide dummy wafers having low iron impurity levels, and a method of using hot pressed silicon carbide dummy wafers in silicon wafer processing applications. |
| 申请公布号 |
AU6670898(A) |
申请公布日期 |
1998.09.22 |
| 申请号 |
AU19980066708 |
申请日期 |
1998.02.27 |
| 申请人 |
SAINT-GOBAIN/INDUSTRIAL CERAMICS, INC. |
发明人 |
THOMAS M. HOLMES;JOHN A. TOMANOVICH |
| 分类号 |
C04B35/565;C04B35/575;C04B35/626;H01L21/02 |
主分类号 |
C04B35/565 |
| 代理机构 |
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