发明名称 SILICON NITRIDE CIRCUIT BOARD AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a circuit board having both of high thermal conductivity and low dielectric property which enables fast and highly reliable signal processing by controlling the volume ratio and particle size of a particle phase in a silicon nitride sintered body to specified ranges and controlling the sum cross section of neck parts per one particle connected to other particles on the neck parts to a specified range of the surface area of the particle. SOLUTION: This silicon nitride circuit board consists of a silicon nitride sintered body having a silicon nitride particle phase and an intergranular phase of a material having a low dielectric const. The volume ratio of the particle phase in the silicon nitride sintered body is 50 to 65%, and the average primary particle size of the particles is >=1.0&mu;m. The particles are connected to each other with a neck part in such a manner that the sum cross section of the neck parts per one particle is 30 to 70% in average of the surface area of the particle, that the diameter of the cross section of the neck is average >=0.5&mu;m, and that the number of necks per one particle is 6 to 8 in average. The silicon nitride sintered body has <=2.10g/cm<2> apparent density, <=6.0 relative dielectric const., >=100MPa strength and >=0.20cm<2> /sec thermal diffusion ratio.
申请公布号 JPH10251069(A) 申请公布日期 1998.09.22
申请号 JP19970061004 申请日期 1997.03.14
申请人 TOSHIBA CORP 发明人 KASORI MITSUO;HORIGUCHI AKIHIRO;SUMINO HIROYASU;UENO FUMIO
分类号 C04B35/584;H01L23/15;H05K1/03;H05K3/46 主分类号 C04B35/584
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