| 发明名称 |
Method of fabricating an overvoltage protection device in integrated circuits |
| 摘要 |
An overvoltage protection device, for inclusion within an integrated circuit, which comprises at least two conductive elements separated by a gas filled gap.
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| 申请公布号 |
US5811330(A) |
申请公布日期 |
1998.09.22 |
| 申请号 |
US19970901946 |
申请日期 |
1997.07.29 |
| 申请人 |
SGS-THOMSON MICROELECTRONICS S.A. |
发明人 |
KALNITSKY, ALEXANDER |
| 分类号 |
H01L21/764;H01L21/3205;H01L21/822;H01L21/8234;H01L23/52;H01L27/02;H01L27/04;H01L27/088;H01L29/78;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/764 |
| 代理机构 |
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代理人 |
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| 主权项 |
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