| 摘要 |
A contact to a semi-conductor device comprises superposed layers of a solid solution of manganese and manganese oxide, manganese, and a contact metal selected from the group consisting of gold, silver, copper, nickel, platinum, palladium, rhodium. The contact is produced by depositing a layer of manganese on to an oxide layer on the semi-conductor body, depositing a layer of the contact metal over the layer of manganese, and heating to react the manganese with the oxide layer to form the solid solution of manganese and manganese oxide covered by a residual layer of manganese and the layer of contact metal. The metal layers may be vapour deposited using separate sources or using a single source comprising an alloy of manganese and silver the temperature of which is slowly raised to vapour deposit first the layer of manganese, followed by a graded layer of manganesesilver, and finally the layer of silver. The semi-conductor material may be silicon, germanium or silicon carbide or an AIII BV or an AII BVI compound. In an example one face of a silicon wafer containing a junction was cleaned and exposed to the air to allow a silicon oxide coating to form. The other faces were masked and layers of manganese and silver deposited from an alloy ribbon in dry hydrogen to react the manganese with the silicon oxide, a molybdenum contact was applied to the opposite face and the device subjected to electrical and mechanical tests. |
